JPS563676B2 - - Google Patents
Info
- Publication number
- JPS563676B2 JPS563676B2 JP2958474A JP2958474A JPS563676B2 JP S563676 B2 JPS563676 B2 JP S563676B2 JP 2958474 A JP2958474 A JP 2958474A JP 2958474 A JP2958474 A JP 2958474A JP S563676 B2 JPS563676 B2 JP S563676B2
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
- H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
- H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
- H10D84/85—Complementary IGFETs, e.g. CMOS
- H10D84/858—Complementary IGFETs, e.g. CMOS comprising a P-type well but not an N-type well
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
- H03K19/0175—Coupling arrangements; Interface arrangements
- H03K19/0185—Coupling arrangements; Interface arrangements using field effect transistors only
- H03K19/018507—Interface arrangements
- H03K19/018521—Interface arrangements of complementary type, e.g. CMOS
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K5/00—Manipulating of pulses not covered by one of the other main groups of this subclass
- H03K5/01—Shaping pulses
- H03K5/02—Shaping pulses by amplifying
- H03K5/023—Shaping pulses by amplifying using field effect transistors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
- H10D89/211—Design considerations for internal polarisation
- H10D89/213—Design considerations for internal polarisation in field-effect devices
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/038—Diffusions-staged
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Computing Systems (AREA)
- General Engineering & Computer Science (AREA)
- Mathematical Physics (AREA)
- Nonlinear Science (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Logic Circuits (AREA)
- Bipolar Integrated Circuits (AREA)
- Semiconductor Integrated Circuits (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US341058A US3916430A (en) | 1973-03-14 | 1973-03-14 | System for eliminating substrate bias effect in field effect transistor circuits |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS49128684A JPS49128684A (en]) | 1974-12-10 |
| JPS563676B2 true JPS563676B2 (en]) | 1981-01-26 |
Family
ID=23336072
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2958474A Expired JPS563676B2 (en]) | 1973-03-14 | 1974-03-13 |
Country Status (9)
| Country | Link |
|---|---|
| US (1) | US3916430A (en]) |
| JP (1) | JPS563676B2 (en]) |
| BE (1) | BE812270A (en]) |
| CA (1) | CA1010577A (en]) |
| DE (1) | DE2411839C3 (en]) |
| FR (1) | FR2221818B1 (en]) |
| GB (1) | GB1452160A (en]) |
| HK (1) | HK70379A (en]) |
| MY (1) | MY8000140A (en]) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63103483U (en]) * | 1986-12-25 | 1988-07-05 | ||
| WO2020050187A1 (ja) | 2018-09-06 | 2020-03-12 | ソニー株式会社 | 医療システム、情報処理装置及び情報処理方法 |
Families Citing this family (63)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5751076B2 (en]) * | 1973-08-02 | 1982-10-30 | ||
| FR2258783B1 (en]) * | 1974-01-25 | 1977-09-16 | Valentin Camille | |
| US4001606A (en) * | 1974-06-05 | 1977-01-04 | Andrew Gordon Francis Dingwall | Electrical circuit |
| JPS5513433B2 (en]) * | 1974-08-29 | 1980-04-09 | ||
| JPS5856890B2 (ja) * | 1974-09-09 | 1983-12-17 | 日本電気株式会社 | トランジスタカイロ |
| US3955210A (en) * | 1974-12-30 | 1976-05-04 | International Business Machines Corporation | Elimination of SCR structure |
| JPS51122721A (en) * | 1975-04-21 | 1976-10-27 | Hitachi Ltd | Boosting circuit |
| JPS51139220A (en) * | 1975-05-28 | 1976-12-01 | Hitachi Ltd | Sense amplifier |
| JPS51139223A (en) * | 1975-05-28 | 1976-12-01 | Hitachi Ltd | Mis level converter circuit |
| JPS5211872A (en) * | 1975-07-18 | 1977-01-29 | Toshiba Corp | Semiconductor device |
| JPS5238852A (en) * | 1975-09-22 | 1977-03-25 | Seiko Instr & Electronics Ltd | Level shift circuit |
| US4039869A (en) * | 1975-11-28 | 1977-08-02 | Rca Corporation | Protection circuit |
| JPS5931863B2 (ja) * | 1976-01-07 | 1984-08-04 | 株式会社日立製作所 | 電圧出力回路 |
| US4039862A (en) * | 1976-01-19 | 1977-08-02 | Rca Corporation | Level shift circuit |
| US4023050A (en) * | 1976-05-10 | 1977-05-10 | Gte Laboratories Incorporated | Logic level converter |
| US4052229A (en) * | 1976-06-25 | 1977-10-04 | Intel Corporation | Process for preparing a substrate for mos devices of different thresholds |
| US4072868A (en) * | 1976-09-16 | 1978-02-07 | International Business Machines Corporation | FET inverter with isolated substrate load |
| US4097772A (en) * | 1977-06-06 | 1978-06-27 | Motorola, Inc. | MOS switch with hysteresis |
| US4128775A (en) * | 1977-06-22 | 1978-12-05 | National Semiconductor Corporation | Voltage translator for interfacing TTL and CMOS circuits |
| US4217502A (en) * | 1977-09-10 | 1980-08-12 | Tokyo Shibaura Denki Kabushiki Kaisha | Converter producing three output states |
| DE2744209C2 (de) * | 1977-09-30 | 1985-09-05 | Siemens AG, 1000 Berlin und 8000 München | Integrierte Schaltungsanordnung zur Ableitung einer zwischen zwei Pegeln umschaltbaren Ausgangsspannung |
| JPS5472691A (en) * | 1977-11-21 | 1979-06-11 | Toshiba Corp | Semiconductor device |
| US4161663A (en) * | 1978-03-10 | 1979-07-17 | Rockwell International Corporation | High voltage CMOS level shifter |
| US4191898A (en) * | 1978-05-01 | 1980-03-04 | Motorola, Inc. | High voltage CMOS circuit |
| JPS5516539A (en) * | 1978-07-20 | 1980-02-05 | Nec Corp | Level shifter circuit |
| US4321491A (en) * | 1979-06-06 | 1982-03-23 | Rca Corporation | Level shift circuit |
| US4318015A (en) * | 1979-06-29 | 1982-03-02 | Rca Corporation | Level shift circuit |
| JPS6032912B2 (ja) * | 1979-09-13 | 1985-07-31 | 株式会社東芝 | Ｃｍｏｓセンスアンプ回路 |
| US4307308A (en) * | 1979-11-19 | 1981-12-22 | Gte Laboratories Incorporated | Digital signal conversion circuit |
| US4317110A (en) * | 1980-06-30 | 1982-02-23 | Rca Corporation | Multi-mode circuit |
| JPS5816565A (ja) * | 1981-07-22 | 1983-01-31 | Hitachi Ltd | 絶縁ゲ−ト形電界効果トランジスタ |
| JPS5891680A (ja) * | 1981-11-26 | 1983-05-31 | Fujitsu Ltd | 半導体装置 |
| US4471242A (en) * | 1981-12-21 | 1984-09-11 | Motorola, Inc. | TTL to CMOS Input buffer |
| JPS58194430A (ja) * | 1982-05-07 | 1983-11-12 | Nec Corp | インタ−フエ−ス回路 |
| JPS5874071A (ja) * | 1982-10-08 | 1983-05-04 | Hitachi Ltd | 半導体装置 |
| US4484088A (en) * | 1983-02-04 | 1984-11-20 | General Electric Company | CMOS Four-transistor reset/set latch |
| US4628340A (en) * | 1983-02-22 | 1986-12-09 | Tokyo Shibaura Denki Kabushiki Kaisha | CMOS RAM with no latch-up phenomenon |
| JPS6030213A (ja) * | 1983-07-28 | 1985-02-15 | Mitsubishi Electric Corp | 半導体回路装置 |
| JPS59130456A (ja) * | 1983-11-24 | 1984-07-27 | Toshiba Corp | 半導体装置 |
| JPS60140923A (ja) * | 1983-12-27 | 1985-07-25 | Nec Corp | 相補型絶縁ゲ−ト電界効果トランジスタレベルシフト回路 |
| JPS60154553A (ja) * | 1984-01-23 | 1985-08-14 | Nec Corp | 相補型ｍｏｓ集積回路の駆動方法 |
| US4857984A (en) * | 1984-12-26 | 1989-08-15 | Hughes Aircraft Company | Three-terminal MOS integrated circuit switch |
| US5324982A (en) * | 1985-09-25 | 1994-06-28 | Hitachi, Ltd. | Semiconductor memory device having bipolar transistor and structure to avoid soft error |
| US6740958B2 (en) * | 1985-09-25 | 2004-05-25 | Renesas Technology Corp. | Semiconductor memory device |
| JPH0671067B2 (ja) * | 1985-11-20 | 1994-09-07 | 株式会社日立製作所 | 半導体装置 |
| US4695744A (en) * | 1985-12-16 | 1987-09-22 | Rca Corporation | Level shift circuit including source follower output |
| US4855624A (en) * | 1988-02-02 | 1989-08-08 | National Semiconductor Corporation | Low-power bipolar-CMOS interface circuit |
| EP0388074A1 (en) * | 1989-03-16 | 1990-09-19 | STMicroelectronics, Inc. | Cmos level shifting circuit |
| DE69122342T2 (de) * | 1990-09-28 | 1997-02-06 | Actel Corp | Niederspannungsbauelement in einem Substrat für hohe Spannungen |
| US5289025A (en) * | 1991-10-24 | 1994-02-22 | At&T Bell Laboratories | Integrated circuit having a boosted node |
| JP3228583B2 (ja) * | 1992-03-31 | 2001-11-12 | 株式会社東芝 | 半導体集積回路装置 |
| US5521531A (en) * | 1993-12-13 | 1996-05-28 | Nec Corporation | CMOS bidirectional transceiver/translator operating between two power supplies of different voltages |
| US5595925A (en) * | 1994-04-29 | 1997-01-21 | Texas Instruments Incorporated | Method for fabricating a multiple well structure for providing multiple substrate bias for DRAM device formed therein |
| US5510731A (en) * | 1994-12-16 | 1996-04-23 | Thomson Consumer Electronics, S.A. | Level translator with a voltage shifting element |
| US5483205A (en) * | 1995-01-09 | 1996-01-09 | Texas Instruments Incorporated | Low power oscillator |
| JP3406949B2 (ja) * | 1995-01-31 | 2003-05-19 | キヤノン株式会社 | 半導体集積回路装置 |
| US5786724A (en) | 1996-12-17 | 1998-07-28 | Texas Instruments Incorporated | Control of body effect in MOS transistors by switching source-to-body bias |
| JP4014865B2 (ja) * | 2001-12-19 | 2007-11-28 | 日本テキサス・インスツルメンツ株式会社 | 駆動回路 |
| US7355905B2 (en) | 2005-07-01 | 2008-04-08 | P.A. Semi, Inc. | Integrated circuit with separate supply voltage for memory that is different from logic circuit supply voltage |
| US20130069157A1 (en) * | 2011-09-20 | 2013-03-21 | Alpha And Omega Semiconductor Incorporated | Semiconductor chip integrating high and low voltage devices |
| US20130071994A1 (en) * | 2011-09-20 | 2013-03-21 | Alpha And Omega Semiconductor Incorporated | Method of integrating high voltage devices |
| GB2575439A (en) * | 2018-07-04 | 2020-01-15 | Rohm Powervation Ltd | A level shifter |
| CN113450712B (zh) * | 2021-06-29 | 2023-04-18 | 京东方科技集团股份有限公司 | 硅基发光单元的像素驱动装置及其方法、显示面板 |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS4844581B1 (en]) * | 1969-03-15 | 1973-12-25 | ||
| US3653002A (en) * | 1970-03-02 | 1972-03-28 | Ncr Co | Nonvolatile memory cell |
| US3712995A (en) * | 1972-03-27 | 1973-01-23 | Rca Corp | Input transient protection for complementary insulated gate field effect transistor integrated circuit device |
| US3801831A (en) * | 1972-10-13 | 1974-04-02 | Motorola Inc | Voltage level shifting circuit |
| JPS546179A (en) * | 1977-06-17 | 1979-01-18 | Hitachi Ltd | Apparatus for reducing windage loss of high-speed rotary bodies |
-
1973
- 1973-03-14 US US341058A patent/US3916430A/en not_active Expired - Lifetime
-
1974
- 1974-03-06 CA CA194,217A patent/CA1010577A/en not_active Expired
- 1974-03-07 GB GB1023274A patent/GB1452160A/en not_active Expired
- 1974-03-12 DE DE2411839A patent/DE2411839C3/de not_active Expired
- 1974-03-13 JP JP2958474A patent/JPS563676B2/ja not_active Expired
- 1974-03-13 FR FR7408466A patent/FR2221818B1/fr not_active Expired
- 1974-03-13 BE BE141983A patent/BE812270A/xx not_active IP Right Cessation
-
1979
- 1979-10-04 HK HK703/79A patent/HK70379A/xx unknown
-
1980
- 1980-12-30 MY MY140/80A patent/MY8000140A/xx unknown
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63103483U (en]) * | 1986-12-25 | 1988-07-05 | ||
| WO2020050187A1 (ja) | 2018-09-06 | 2020-03-12 | ソニー株式会社 | 医療システム、情報処理装置及び情報処理方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| DE2411839C3 (de) | 1979-01-18 |
| CA1010577A (en) | 1977-05-17 |
| BE812270A (fr) | 1974-07-01 |
| DE2411839B2 (de) | 1978-05-18 |
| GB1452160A (en) | 1976-10-13 |
| JPS49128684A (en]) | 1974-12-10 |
| HK70379A (en) | 1979-10-12 |
| MY8000140A (en) | 1980-12-31 |
| FR2221818B1 (en]) | 1977-09-30 |
| DE2411839A1 (de) | 1974-09-26 |
| US3916430A (en) | 1975-10-28 |
| FR2221818A1 (en]) | 1974-10-11 |